Influence of the deposition parameters on the growth of SiGe nanocrystals embedded in Al2O3 matrix

Si1-xGex nanocrystals (NCs), embedded in Al2O3 matrix, were fabricated on Si (100) substrates by RF magnetron sputtering technique with following annealing procedure at 800 C, in nitrogen atmosphere. The presence of Si1-xGex NCs was confirmed by grazing incidence X-ray diffraction (GIXRD), grazing i...

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Bibliographic Details
Main Author: Vieira, E. M. F. (author)
Other Authors: Pinto, S. R. C. (author), Levichev, S. (author), Rolo, Anabela G. (author), Chahboun, A. (author), Buljan, M. (author), Barradas, N. P. (author), Alves, E. (author), Bernstorff, S. (author), Conde, O. (author), Gomes, M. J. M. (author)
Format: article
Language:eng
Published: 2011
Subjects:
Semiconductors
Magnetron sputtering
Si1-xGex nanocrystals
Mullite
GIXRD
Raman scattering
GISAXS
Si Ge nanocrystals 1-x x
Science & Technology
Online Access:http://hdl.handle.net/1822/14310
Country:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/14310
Description
Summary:Si1-xGex nanocrystals (NCs), embedded in Al2O3 matrix, were fabricated on Si (100) substrates by RF magnetron sputtering technique with following annealing procedure at 800 C, in nitrogen atmosphere. The presence of Si1-xGex NCs was confirmed by grazing incidence X-ray diffraction (GIXRD), grazing incidence small angle X-ray scattering (GISAXS) and Raman spectroscopy. The influence of the growth conditions on the structural properties and composition of Si1-xGex NCs inside the alumina matrix was analyzed. Optimal conditions to grow Si1-xGex (x~0.8) NCs sized between 3 and 4 nm in Al2O3 matrix were established.

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