Influence of the deposition parameters on the growth of SiGe nanocrystals embedded in Al2O3 matrix

Si1-xGex nanocrystals (NCs), embedded in Al2O3 matrix, were fabricated on Si (100) substrates by RF magnetron sputtering technique with following annealing procedure at 800 C, in nitrogen atmosphere. The presence of Si1-xGex NCs was confirmed by grazing incidence X-ray diffraction (GIXRD), grazing i...

ver descrição completa

Detalhes bibliográficos
Autor principal: Vieira, E. M. F. (author)
Outros Autores: Pinto, S. R. C. (author), Levichev, S. (author), Rolo, Anabela G. (author), Chahboun, A. (author), Buljan, M. (author), Barradas, N. P. (author), Alves, E. (author), Bernstorff, S. (author), Conde, O. (author), Gomes, M. J. M. (author)
Formato: article
Idioma:eng
Publicado em: 2011
Assuntos:
Semiconductors
Magnetron sputtering
Si1-xGex nanocrystals
Mullite
GIXRD
Raman scattering
GISAXS
Si Ge nanocrystals 1-x x
Science & Technology
Texto completo:http://hdl.handle.net/1822/14310
País:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/14310

Texto Completo

http://hdl.handle.net/1822/14310

Registros relacionados