Low temperature behaviour of a complex luminescence in Mn-doped GaP in the region of 1.7-1.8 eV
Broad-band emission observed in n-type Mn-doped GaP samples before and after annealing at 1000°C are studied by time resolved spectroscopy and interpreted as due to excitons bound to complexes. These complexes are rearranged by the heat treatment.
| Autor principal: | |
|---|---|
| Outros Autores: | |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
1000
|
| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10773/6315 |
| País: | Portugal |
| Oai: | oai:ria.ua.pt:10773/6315 |