Low temperature behaviour of a complex luminescence in Mn-doped GaP in the region of 1.7-1.8 eV
Broad-band emission observed in n-type Mn-doped GaP samples before and after annealing at 1000°C are studied by time resolved spectroscopy and interpreted as due to excitons bound to complexes. These complexes are rearranged by the heat treatment.
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| Format: | article |
| Language: | eng |
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1000
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| Online Access: | http://hdl.handle.net/10773/6315 |
| Country: | Portugal |
| Oai: | oai:ria.ua.pt:10773/6315 |