Insulator materials for interface passivation of Cu(In,Ga)Se2 thin films

In this work, Metal-Insulator-Semiconductor (MIS) structures were fabricated in order to study different types of insulators, namely, aluminum oxide (Al2O3), silicon nitride (Si3Nx) and silicon oxide (SiOx) to be used as passivation layers in Cu(In,Ga)Se2 (CIGS) thin film solar cells. The investigat...

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Detalhes bibliográficos
Autor principal: Cunha, J. M. V. (author)
Outros Autores: Fernandes, P. A. (author), Hultqvist, A. (author), Teixeira, J. P. (author), Bose, S. (author), Vermang, B. (author), Garud, S. (author), Buldu, D. (author), Gaspar, J. (author), Edoff, M. (author), Leitão, J. P. (author), Salomé, P. M. P. (author)
Formato: article
Idioma:eng
Publicado em: 2021
Assuntos:
Chemical passivation
Cu(In,Ga)Se2 (CIGS)
Field-effect passivation
Interface
Passivation
Solar cells
Thin films
Texto completo:http://hdl.handle.net/10773/30539
País:Portugal
Oai:oai:ria.ua.pt:10773/30539

Texto Completo

http://hdl.handle.net/10773/30539

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