Insulator materials for interface passivation of Cu(In,Ga)Se2 thin films

In this work, Metal-Insulator-Semiconductor (MIS) structures were fabricated in order to study different types of insulators, namely, aluminum oxide (Al2O3), silicon nitride (Si3Nx) and silicon oxide (SiOx) to be used as passivation layers in Cu(In,Ga)Se2 (CIGS) thin film solar cells. The investigat...

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Bibliographic Details
Main Author: Cunha, J. M. V. (author)
Other Authors: Fernandes, P. A. (author), Hultqvist, A. (author), Teixeira, J. P. (author), Bose, S. (author), Vermang, B. (author), Garud, S. (author), Buldu, D. (author), Gaspar, J. (author), Edoff, M. (author), Leitão, J. P. (author), Salomé, P. M. P. (author)
Format: article
Language:eng
Published: 2021
Subjects:
Chemical passivation
Cu(In,Ga)Se2 (CIGS)
Field-effect passivation
Interface
Passivation
Solar cells
Thin films
Online Access:http://hdl.handle.net/10773/30539
Country:Portugal
Oai:oai:ria.ua.pt:10773/30539

Internet

http://hdl.handle.net/10773/30539

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