Non-volatile memory device using a polymer modified nanocrystal

Thin-film planar structures using AgCl nanocrystals embedded in a polymer blend; exhibit reliable and reproducible switching between different non-volatile conductance states. It is shown that resistive switching in these systems cannot be related with migration diffusion or aggregation of metals to...

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Detalhes bibliográficos
Autor principal: Kiazadeh, Asal (author)
Outros Autores: Gomes, Henrique L. (author), Costa, Ana M. Rosa da (author), Moreira, José (author), De Leeuw, Dago M. (author), Meskers, S. C. J. (author)
Formato: article
Idioma:eng
Publicado em: 2013
Assuntos:
Nanocrystals
Resistive switching
Non-volatile memories
Texto completo:http://hdl.handle.net/10400.1/3228
País:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/3228
Descrição
Resumo:Thin-film planar structures using AgCl nanocrystals embedded in a polymer blend; exhibit reliable and reproducible switching between different non-volatile conductance states. It is shown that resistive switching in these systems cannot be related with migration diffusion or aggregation of metals to form metallic filaments. This is supported by temperature-dependent measurement showing that the current in the high conductance state is thermal activated (0.6 eV).

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