Non-volatile memory device using a polymer modified nanocrystal

Thin-film planar structures using AgCl nanocrystals embedded in a polymer blend; exhibit reliable and reproducible switching between different non-volatile conductance states. It is shown that resistive switching in these systems cannot be related with migration diffusion or aggregation of metals to...

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Detalhes bibliográficos
Autor principal: Kiazadeh, Asal (author)
Outros Autores: Gomes, Henrique L. (author), Costa, Ana M. Rosa da (author), Moreira, José (author), De Leeuw, Dago M. (author), Meskers, S. C. J. (author)
Formato: article
Idioma:eng
Publicado em: 2013
Assuntos:
Nanocrystals
Resistive switching
Non-volatile memories
Texto completo:http://hdl.handle.net/10400.1/3228
País:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/3228

Texto Completo

http://hdl.handle.net/10400.1/3228

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