Non-volatile memory device using a polymer modified nanocrystal

Thin-film planar structures using AgCl nanocrystals embedded in a polymer blend; exhibit reliable and reproducible switching between different non-volatile conductance states. It is shown that resistive switching in these systems cannot be related with migration diffusion or aggregation of metals to...

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Bibliographic Details
Main Author: Kiazadeh, Asal (author)
Other Authors: Gomes, Henrique L. (author), Costa, Ana M. Rosa da (author), Moreira, José (author), De Leeuw, Dago M. (author), Meskers, S. C. J. (author)
Format: article
Language:eng
Published: 2013
Subjects:
Nanocrystals
Resistive switching
Non-volatile memories
Online Access:http://hdl.handle.net/10400.1/3228
Country:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/3228
Description
Summary:Thin-film planar structures using AgCl nanocrystals embedded in a polymer blend; exhibit reliable and reproducible switching between different non-volatile conductance states. It is shown that resistive switching in these systems cannot be related with migration diffusion or aggregation of metals to form metallic filaments. This is supported by temperature-dependent measurement showing that the current in the high conductance state is thermal activated (0.6 eV).

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