Erbium-doped nanocrystalline silicon thin films produced by RF sputtering - Annealing effect on the Er emission

In the present work, erbium doped nanocrystalline silicon thin films were produced by reactive magnetron sputtering on glass substrates under different conditions (substrate temperature and Er content). The film structure was studied using Raman spectroscopy. The chemical composition was determined...

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Detalhes bibliográficos
Autor principal: Cerqueira, M.F. (author)
Outros Autores: Monteiro, Teresa (author), Soares, Manuel (author), Kozanecki, A. (author), Alpuim, P. (author), Alves, E. (author)
Formato: article
Idioma:eng
Publicado em: 1000
Assuntos:
Annealing effects
Chemical compositions
Crystalline samples
Erbium doped
Film structure
Glass substrates
Low temperatures
matrix
Nano-crystalline silicon thin films
PL intensity
Reactive magnetron sputtering
Rf-sputtering
Substrate temperature
Thermal annealing treatment
Texto completo:http://hdl.handle.net/10773/5551
País:Portugal
Oai:oai:ria.ua.pt:10773/5551

Texto Completo

http://hdl.handle.net/10773/5551

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