Modeling buffer layer IGBTs with an efficient parameter extraction method

A Finite Element physics-based punch-through IGBT model is presented, as well as its porting into standard circuit simulator SPICE. Developed model is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs, from which charge carrier di...

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Detalhes bibliográficos
Autor principal: Rui Chibante (author)
Outros Autores: Armando Araújo (author), Adriano Carvalho (author)
Formato: book
Idioma:eng
Publicado em: 2005
Assuntos:
Texto completo:https://hdl.handle.net/10216/275
País:Portugal
Oai:oai:repositorio-aberto.up.pt:10216/275