Modeling buffer layer IGBTs with an efficient parameter extraction method
A Finite Element physics-based punch-through IGBT model is presented, as well as its porting into standard circuit simulator SPICE. Developed model is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs, from which charge carrier di...
Main Author: | |
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Other Authors: | , |
Format: | book |
Language: | eng |
Published: |
2005
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Subjects: | |
Online Access: | https://hdl.handle.net/10216/275 |
Country: | Portugal |
Oai: | oai:repositorio-aberto.up.pt:10216/275 |