IBA study of SiGe/SiO2 nanostructured multilayers

SiGe/SiO2 multilayers with layer thickness of 5 nm were deposited with RF magnetron sputtering. The as deposited samples had well defined SiGe amorphous layers. Different annealing treatments were made to promote the formation of SiGe nanocrystals. We report an ion beam analysis study with the Ruthe...

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Bibliographic Details
Main Author: Barradas, N. P. (author)
Other Authors: Alves, E. (author), Vieira, E. M. F. (author), Parisini, A. (author), Conde, O. (author), Martín-Sánchez, J. (author), Rolo, Anabela G. (author), Chahboun, A. (author), Gomes, M. J. M. (author)
Format: article
Language:eng
Published: 2014
Subjects:
Ion beam analysis
Nanostructured multilayers
SiGe/SiO2
Ciências Naturais::Ciências Físicas
Science & Technology
Online Access:http://hdl.handle.net/1822/33632
Country:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/33632

Internet

http://hdl.handle.net/1822/33632

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