IBA study of SiGe/SiO2 nanostructured multilayers

SiGe/SiO2 multilayers with layer thickness of 5 nm were deposited with RF magnetron sputtering. The as deposited samples had well defined SiGe amorphous layers. Different annealing treatments were made to promote the formation of SiGe nanocrystals. We report an ion beam analysis study with the Ruthe...

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Detalhes bibliográficos
Autor principal: Barradas, N. P. (author)
Outros Autores: Alves, E. (author), Vieira, E. M. F. (author), Parisini, A. (author), Conde, O. (author), Martín-Sánchez, J. (author), Rolo, Anabela G. (author), Chahboun, A. (author), Gomes, M. J. M. (author)
Formato: article
Idioma:eng
Publicado em: 2014
Assuntos:
Ion beam analysis
Nanostructured multilayers
SiGe/SiO2
Ciências Naturais::Ciências Físicas
Science & Technology
Texto completo:http://hdl.handle.net/1822/33632
País:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/33632

Texto Completo

http://hdl.handle.net/1822/33632

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