Modeling electrical characteristics of thin-film field-effect transistors I. Trap-free materials
A new analytical model is developed for thin-film field-effect transistors (TFTs). The active layer of the devices is considered purely two-dimensional. In the first part, the basic model is developed for intrinsic materials. It is demonstrated that it accurately describes the electrical characteris...
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| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2015
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| Texto completo: | http://hdl.handle.net/10400.1/6604 |
| País: | Portugal |
| Oai: | oai:sapientia.ualg.pt:10400.1/6604 |