Modeling electrical characteristics of thin-film field-effect transistors I. Trap-free materials
A new analytical model is developed for thin-film field-effect transistors (TFTs). The active layer of the devices is considered purely two-dimensional. In the first part, the basic model is developed for intrinsic materials. It is demonstrated that it accurately describes the electrical characteris...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | article |
| Language: | eng |
| Published: |
2015
|
| Online Access: | http://hdl.handle.net/10400.1/6604 |
| Country: | Portugal |
| Oai: | oai:sapientia.ualg.pt:10400.1/6604 |