Modeling electrical characteristics of thin-film field-effect transistors I. Trap-free materials

A new analytical model is developed for thin-film field-effect transistors (TFTs). The active layer of the devices is considered purely two-dimensional. In the first part, the basic model is developed for intrinsic materials. It is demonstrated that it accurately describes the electrical characteris...

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Bibliographic Details
Main Author: Stallinga, Peter (author)
Other Authors: Gomes, Henrique L. (author)
Format: article
Language:eng
Published: 2015
Online Access:http://hdl.handle.net/10400.1/6604
Country:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/6604