Resistive switching RAM devices based on amorphous oxide semiconductors for system on panel applications

This work reports the mask design, fabrication and characterization of memristor devices with diode like electrical behavior at pristine state. It is due to the presence of Schottky junctions between Zinc-tin-oxide (ZTO) and platinum - Indium-galliumzinc- oxide (IGZO) and molybdenum oxide for two di...

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Bibliographic Details
Main Author: Paulo, João Francisco Carvalho (author)
Format: masterThesis
Language:eng
Published: 2020
Subjects:
ReRAM
memristor
ZTO
IGZO
resistive switching memory
transparent electronic
Domínio/Área Científica::Engenharia e Tecnologia::Nanotecnologia
Online Access:http://hdl.handle.net/10362/91292
Country:Portugal
Oai:oai:run.unl.pt:10362/91292

Internet

http://hdl.handle.net/10362/91292

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