Resistive switching RAM devices based on amorphous oxide semiconductors for system on panel applications

This work reports the mask design, fabrication and characterization of memristor devices with diode like electrical behavior at pristine state. It is due to the presence of Schottky junctions between Zinc-tin-oxide (ZTO) and platinum - Indium-galliumzinc- oxide (IGZO) and molybdenum oxide for two di...

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Detalhes bibliográficos
Autor principal: Paulo, João Francisco Carvalho (author)
Formato: masterThesis
Idioma:eng
Publicado em: 2020
Assuntos:
ReRAM
memristor
ZTO
IGZO
resistive switching memory
transparent electronic
Domínio/Área Científica::Engenharia e Tecnologia::Nanotecnologia
Texto completo:http://hdl.handle.net/10362/91292
País:Portugal
Oai:oai:run.unl.pt:10362/91292

Texto Completo

http://hdl.handle.net/10362/91292

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