Nonlinear device model of microwave power GaNHEMTs for high power-amplifier design
This paper presents a nonlinear equivalent circuit model of microwave power GaN high electron-mobility transistors (HEMTs), amenable for integration into commercial harmonic balance or transient simulators. All the steps taken to extract its parameter set are explained, from the extrinsic linear ele...
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| Outros Autores: | , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10773/5178 |
| País: | Portugal |
| Oai: | oai:ria.ua.pt:10773/5178 |