Ab initio modeling of defects in silicon, germanium and SiGe alloys

Understanding the most elemental defects in semiconductors is a fundamental step to grasp the countless solid-state reactions that may occur during crystal growth, device processing and operation stages. The higher carrier mobilitity in SiGe alloys and germanium, when compared with silicon, and the...

Full description

Bibliographic Details
Main Author: Torres, V. J. B. (author)
Other Authors: Coutinho, J. (author), Carvalho, A. (author), Barroso, M. (author), Almeida, Luís de (author), Pinto, H. (author), Ribeiro, R. M. (author)
Format: conferencePoster
Language:eng
Published: 2005
Subjects:
Silicon
Germanium
Modelling
Defects
SiGe
Alloys
Online Access:http://hdl.handle.net/1822/5161
Country:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/5161

Internet

http://hdl.handle.net/1822/5161

Similar Items