Ab initio modeling of defects in silicon, germanium and SiGe alloys

Understanding the most elemental defects in semiconductors is a fundamental step to grasp the countless solid-state reactions that may occur during crystal growth, device processing and operation stages. The higher carrier mobilitity in SiGe alloys and germanium, when compared with silicon, and the...

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Detalhes bibliográficos
Autor principal: Torres, V. J. B. (author)
Outros Autores: Coutinho, J. (author), Carvalho, A. (author), Barroso, M. (author), Almeida, Luís de (author), Pinto, H. (author), Ribeiro, R. M. (author)
Formato: conferencePoster
Idioma:eng
Publicado em: 2005
Assuntos:
Silicon
Germanium
Modelling
Defects
SiGe
Alloys
Texto completo:http://hdl.handle.net/1822/5161
País:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/5161

Texto Completo

http://hdl.handle.net/1822/5161

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