High temperature annealing of Europium implanted AlN

AlN was implanted with 300 keV Eu ions within a wide fluence range from 4 × 1014 to 1.4 × 1017 at/cm2. The damage build-up was investigated by Rutherford Backscattering/Channelling. Sigmoidal shaped damage build-up curves indicate efficient dynamic annealing. A regime with low damage increase for fl...

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Bibliographic Details
Main Author: Lorenz, K. (author)
Other Authors: Magalhães, Sérgio (author), Alves, E. (author), Peres, Marco (author), Monteiro, Teresa (author), Neves, Armando (author), Boćkowski, M. (author)
Format: article
Language:eng
Published: 1000
Subjects:
Aluminium Nitride
Implantation
Photoluminescence
Rare Earth
Rutherford Backscattering Spectrometry
Online Access:http://hdl.handle.net/10773/5556
Country:Portugal
Oai:oai:ria.ua.pt:10773/5556

Internet

http://hdl.handle.net/10773/5556

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