Electrical and photoelectronic properties of hexagonal GaN

Photoconductivity of a non-intentionally doped GaN layer is observed for above band gap excitation. No below band gap excitation causes photoconductivity, but photoconductivity is optical quenched at energies of 1.28, 1.41, 1.53 and ≈2eV. The dark current and the yellow photoluminescence band show t...

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Detalhes bibliográficos
Autor principal: Seitz, R. (author)
Outros Autores: Gaspar, C. (author), Monteiro, T. (author), Pereira, L. (author), Pereira, E. (author), Schön, Q. (author), Heuken, M. (author)
Formato: article
Idioma:eng
Publicado em: 1000
Assuntos:
Activation energy
Energy gap
Optoelectronic devices
Photoconductivity
Photoluminescence
Semiconducting films
Texto completo:http://hdl.handle.net/10773/6091
País:Portugal
Oai:oai:ria.ua.pt:10773/6091
Descrição
Resumo:Photoconductivity of a non-intentionally doped GaN layer is observed for above band gap excitation. No below band gap excitation causes photoconductivity, but photoconductivity is optical quenched at energies of 1.28, 1.41, 1.53 and ≈2eV. The dark current and the yellow photoluminescence band show the same activation energy (42 meV) supporting therefore the model that relates the yellow band to a shallow donor to a deep acceptor transition. The photocurrent is thermally quenched with an activation energy of 77 meV.

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