Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma

GaN thin films grown by cyclic pulsed laser deposition were characterised by X-ray diffraction (XRD), photoluminescence (PL), and atomic force microscopy. Films were grown on pre-nitridated c-plane sapphire at two substrate temperatures (600 and 650 °C). Films deposited at 650 °C exhibit a higher gr...

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Bibliographic Details
Main Author: Sanguino, P. (author)
Other Authors: Niehus, M. (author), Melo, L.V. (author), Schwarz, R. (author), Koynov, S. (author), Monteiro, T. (author), Soares, J. (author), Alves, H. (author), Meyer, B.K. (author)
Format: article
Language:eng
Published: 1000
Subjects:
GaN
Photoluminescence
Pulsed laser deposition
X-ray diffraction
Online Access:http://hdl.handle.net/10773/6704
Country:Portugal
Oai:oai:ria.ua.pt:10773/6704

Internet

http://hdl.handle.net/10773/6704

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