Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxide

UIDB/50025/2020-2023

Detalhes bibliográficos
Autor principal: Silva, Carlos (author)
Outros Autores: Martins, Jorge (author), Deuermeier, Jonas (author), Pereira, Maria Elias (author), Rovisco, Ana (author), Barquinha, Pedro (author), Goes, João (author), Martins, Rodrigo (author), Fortunato, Elvira (author), Kiazadeh, Asal (author)
Formato: article
Idioma:eng
Publicado em: 2021
Assuntos:
memristor
ZTO
amorphous oxide
physical mechanism
resistive switching device
Texto completo:http://hdl.handle.net/10362/123692
País:Portugal
Oai:oai:run.unl.pt:10362/123692

Texto Completo

http://hdl.handle.net/10362/123692

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