Memristors using solution-based IGZO nanoparticles

Solution-based indium-gallium-zinc oldde (IGZO) nanoparticles deposited by spin coating have been investigated as a resistive switching layer in metal-insulator-metal structures for nonvolatile memory applications. Optimized devices show a bipolar resistive switching behavior, low programming voltag...

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Detalhes bibliográficos
Autor principal: Rosa, Jose (author)
Outros Autores: Kiazadeh, Asal (author), Santos, Lidia (author), Deuermeier, Jonas (author), Martins, Rodrigo (author), Gomes, Henrique L. (author), Fortunato, Elvira (author)
Formato: article
Idioma:eng
Publicado em: 2018
Assuntos:
Resistive switching memory
Thin-film transistors
Performance improvement
High-speed
Mobility
Devices
Reram
Field
Texto completo:http://hdl.handle.net/10400.1/11762
País:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/11762

Texto Completo

http://hdl.handle.net/10400.1/11762

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