Implantation and annealing studies of Tm-implanted GaN

Thulium ions were implanted into metal organic chemical vapour deposition (MOCVD) grown GaN films with different fluences at implantation temperatures of 20, 400 and 500°C. Subsequent annealing of the samples was performed in a rapid thermal annealing apparatus. The lattice damage introduced by the...

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Detalhes bibliográficos
Autor principal: Lorenz, K. (author)
Outros Autores: Alves, E. (author), Wahl, U. (author), Monteiro, T. (author), Dalmasso, S. (author), Martin, R.W. (author), O'Donnell, K.P. (author), Vianden, R. (author)
Formato: article
Idioma:eng
Publicado em: 1000
Assuntos:
CL
GaN
Ion implantation
Rare earth
RBS/channelling
Tm
Texto completo:http://hdl.handle.net/10773/6503
País:Portugal
Oai:oai:ria.ua.pt:10773/6503

Texto Completo

http://hdl.handle.net/10773/6503

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