Control of the deposition ratio of Bi2Te3 and Sb2Te3 in a vacuum evaporator for fabrication of Peltier elements

This article reports the main problem and the corresponding solution of the co-evaporation of Bi2Te3 and Sb2Te3 films for the fabrication of Peltier elements. This main problem consists in the control of the deposition rates of the two elements: Bi or Sb and Te, which have very different vapor press...

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Bibliographic Details
Main Author: Gonçalves, L. M. (author)
Other Authors: Rocha, J. G. (author), Correia, J. H. (author), Couto, Carlos (author)
Format: conferencePaper
Language:eng
Published: 2006
Subjects:
Co-evaporation
Compound
Deposition rate
PID
Peltier
Bismuth Telluride
Science & Technology
Online Access:http://hdl.handle.net/1822/5559
Country:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/5559
Description
Summary:This article reports the main problem and the corresponding solution of the co-evaporation of Bi2Te3 and Sb2Te3 films for the fabrication of Peltier elements. This main problem consists in the control of the deposition rates of the two elements: Bi or Sb and Te, which have very different vapor pressures. The control of the deposition ratio was achieved by means of a PID controller, which permitted the fabrication of thin-film Peltier elements that produce a temperature gradient in the order of 2C between their hot and cold junctions, when measured at free air conditions.

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