Unraveling the resistive switching effect in ZnO/0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 heterostructures

This work reports the effect of partial oxygen pressure, used in the deposition of the ZnO layer, on the band alignment at ZnO − 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (0.5BZT-0.5BCT) interface and on the resistive switching (RS) behavior of pulsed laser deposited ZnO/0.5BZT-0.5BCT heterostructures...

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Detalhes bibliográficos
Autor principal: Silva, J. P. B. (author)
Outros Autores: Vorokhta, M. (author), Dvořák, F. (author), Sekhar, K. C. (author), Matolín, V. (author), Moreira, J. Agostinho (author), Pereira, Mário (author), Gomes, M. J. M. (author)
Formato: article
Idioma:eng
Publicado em: 2017
Assuntos:
Resistive switching
Charge coupling effect
ZnO/0.5BZT-0.5BCT heterojunction
Science & Technology
Texto completo:http://hdl.handle.net/1822/43586
País:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/43586

Texto Completo

http://hdl.handle.net/1822/43586

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