Towards the understanding of the intentionally induced yellow luminescence in GaN nanowires

Gallium nitride (GaN) has gained a lot of attention due to its high range of applications as solid state light emitters and detectors. However, the nitride samples often evidence deep level optically active defects affecting their performance on the high energy spectral region. This is the case for...

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Bibliographic Details
Main Author: Rodrigues, J (author)
Other Authors: Miranda, S.M.C (author), Fernandes, A.J.S (author), Nogales, E (author), Alves, L.C. (author), Alves, E. (author), Tourbot, G (author), Auzelle, T. (author), Daudin, B. (author), Méndez, B. (author), Trindade, T. (author), Lorenz, K (author), Costa, F.M (author), Monteiro, T. (author)
Format: article
Language:eng
Published: 1000
Subjects:
GaN
Yellow luminescence
Nanowires
Online Access:http://hdl.handle.net/10773/11636
Country:Portugal
Oai:oai:ria.ua.pt:10773/11636

Internet

http://hdl.handle.net/10773/11636

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