Investigation of electron acceptor states in poly(3-methylthiophene)
Both the DC and AC admittance of Schottky barrier diodes formed at the interface of aluminium and poly(3-methyl thiophene) have been investigated in some detail. The capacitance-voltage plots for the devices suggest the presence of two acceptor states, one shallow and one deep. The total concentrati...
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| Formato: | conferenceObject |
| Idioma: | eng |
| Publicado em: |
2015
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| Texto completo: | http://hdl.handle.net/10400.1/6611 |
| País: | Portugal |
| Oai: | oai:sapientia.ualg.pt:10400.1/6611 |
| Resumo: | Both the DC and AC admittance of Schottky barrier diodes formed at the interface of aluminium and poly(3-methyl thiophene) have been investigated in some detail. The capacitance-voltage plots for the devices suggest the presence of two acceptor states, one shallow and one deep. The total concentration of acceptor states, 10 24-10 26 m -3 depending on the degree of undoping, agrees well with estimates from the reverse I-V characteristics assuming image force lowering of the interfacial potential barrier. |
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