Stacked photo-sensing devices based on SiC alloys A non-pixelled architecture for imagers and demultiplexing devices
In this review paper different designs based on stacked p-i'-n-p-i-n heterojunctions are presented and compared with the single p-i-n sensing structures. The imagers utilise self-field induced depletion layers for light detection and a modulated laser beam for sequential readout. The effect of...
| Autor principal: | |
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| Outros Autores: | , , , , |
| Formato: | conferenceObject |
| Idioma: | eng |
| Publicado em: |
2012
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10400.21/1355 |
| País: | Portugal |
| Oai: | oai:repositorio.ipl.pt:10400.21/1355 |