Electrical and raman scattering studies of ZnO:P and ZnO:Sb thin films

A study on the structure, electrical and optical properties of ZnO thin films produced by r.f. magnetron sputtering and implanted either with phosphorous (P) or antimony (Sb) is reported in this work. Raman spectroscopy, X-ray diffraction, optical transmittance and Hall effect measurements have been...

Full description

Bibliographic Details
Main Author: Campos, J. Ayres de (author)
Other Authors: Viseu, T. M. R. (author), Rolo, Anabela G. (author), Barradas, N. P. (author), Alves, E. (author), Lacerda-Arôso, T. de Lacerda (author), Cerqueira, M. F. (author)
Format: article
Language:eng
Published: 2010
Subjects:
ZnO
Ion implantation
p-type doping
X-ray
Hall effect
Raman
Science & Technology
Online Access:http://hdl.handle.net/1822/13750
Country:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/13750

Internet

http://hdl.handle.net/1822/13750

Similar Items