Electrical and raman scattering studies of ZnO:P and ZnO:Sb thin films

A study on the structure, electrical and optical properties of ZnO thin films produced by r.f. magnetron sputtering and implanted either with phosphorous (P) or antimony (Sb) is reported in this work. Raman spectroscopy, X-ray diffraction, optical transmittance and Hall effect measurements have been...

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Detalhes bibliográficos
Autor principal: Campos, J. Ayres de (author)
Outros Autores: Viseu, T. M. R. (author), Rolo, Anabela G. (author), Barradas, N. P. (author), Alves, E. (author), Lacerda-Arôso, T. de Lacerda (author), Cerqueira, M. F. (author)
Formato: article
Idioma:eng
Publicado em: 2010
Assuntos:
ZnO
Ion implantation
p-type doping
X-ray
Hall effect
Raman
Science & Technology
Texto completo:http://hdl.handle.net/1822/13750
País:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/13750

Texto Completo

http://hdl.handle.net/1822/13750

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