Planar non-volatile memory based on metal nanoparticles

Resistive switching properties of silver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated. These devices have on/off resistance ratio as high as 103 , retention times reachin...

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Bibliographic Details
Main Author: Kiazadeh, Asal (author)
Other Authors: Gomes, Henrique L. (author), Costa, Ana M. Rosa da (author), Rocha, P. R. F. (author), Chen, Q. (author), Moreira, José (author), De Leeuw, Dago M. (author), Meskers, S. C. J. (author)
Format: article
Language:eng
Published: 2013
Subjects:
Electrical properties
Nanostructure
Ag
Online Access:http://hdl.handle.net/10400.1/3230
Country:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/3230
Description
Summary:Resistive switching properties of silver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated. These devices have on/off resistance ratio as high as 103 , retention times reaching to months and good endurance cycles. Temperature-dependent measurements show that the charge transport is weakly thermal activated (73 meV) for both states suggesting that nanoparticles will not aggregate into a metallic filament.

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