Doping of amorphous and microcrystalline silicon films deposited at low substrate temperatures by hot-wire chemical vapor deposition
The gas phase doping of amorphous (alpha -Si:H) and microcrystalline (muc-Si:H) silicon thin films deposited at substrate temperatures of 25 degreesC and 100 degreesC by hot-wire chemical vapor deposition is studied. Phosphine was used for n-type doping and diborane for p-type doping. The electronic...
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| Outros Autores: | , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2001
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/1822/5553 |
| País: | Portugal |
| Oai: | oai:repositorium.sdum.uminho.pt:1822/5553 |