Low-frequency diffusion noise in resistive-switching memories based on metal-oxide polymer structure

Low-frequency noise is studied in resistive-switching memories based on metal–oxide polymer diodes. The noise spectral power follows a 1/fγ behavior, with γ = 1 in the ohmic region and with γ = 3/2 at high bias beyond the ohmic region. The exponent γ = 3/2 is explained as noise caused by Brownian mo...

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Bibliographic Details
Main Author: Rocha, P. R. F. (author)
Other Authors: Gomes, Henrique L. (author), Vandamme, L. K. J. (author), Chen, Q. (author), Kiazadeh, Asal (author), De Leeuw, Dago M. (author), Meskers, S. C. J. (author)
Format: article
Language:eng
Published: 2013
Subjects:
Diffusion noise
Electrical properties
Lowfrequency noise
Nonvolatile memory
Random telegraph noise
Resistive switching
Online Access:http://hdl.handle.net/10400.1/3260
Country:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/3260
Description
Summary:Low-frequency noise is studied in resistive-switching memories based on metal–oxide polymer diodes. The noise spectral power follows a 1/fγ behavior, with γ = 1 in the ohmic region and with γ = 3/2 at high bias beyond the ohmic region. The exponent γ = 3/2 is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify 1/f noise in thin films has an estimated value of 10−21 cm2/Ω, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the 1/f noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.

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