Low-frequency diffusion noise in resistive-switching memories based on metal-oxide polymer structure
Low-frequency noise is studied in resistive-switching memories based on metal–oxide polymer diodes. The noise spectral power follows a 1/fγ behavior, with γ = 1 in the ohmic region and with γ = 3/2 at high bias beyond the ohmic region. The exponent γ = 3/2 is explained as noise caused by Brownian mo...
| Autor principal: | |
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| Outros Autores: | , , , , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2013
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10400.1/3260 |
| País: | Portugal |
| Oai: | oai:sapientia.ualg.pt:10400.1/3260 |