Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles

Resistive switching is investigated in thin-film planar diodes using silver oxide nanoparticles capped in a polymer. The conduction channel is directly exposed to the ambient atmosphere. Two types of switching are observed. In air, the hysteresis loop in the current–voltage characteristics is S-shap...

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Bibliographic Details
Main Author: Kiazadeh, Asal (author)
Other Authors: Gomes, Henrique L. (author), Rosa da Costa, Ana (author), Moreira, José (author), De Leeuw, Dago M. (author), Meskers, S. C. J. (author)
Format: article
Language:eng
Published: 2014
Subjects:
Online Access:http://hdl.handle.net/10400.1/2720
Country:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/2720
Description
Summary:Resistive switching is investigated in thin-film planar diodes using silver oxide nanoparticles capped in a polymer. The conduction channel is directly exposed to the ambient atmosphere. Two types of switching are observed. In air, the hysteresis loop in the current–voltage characteristics is S-shaped. The high conductance state is volatile and unreliable. The switching is mediated by moisture and electrochemistry. In vacuum, the hysteresis loops are symmetric, N-shaped and exhibit a negative differential resistance region. The conductance states are non-volatile with good data retention, programming cycling endurance and large current modulation ratio. The switching is attributed to electroforming of silver oxide clusters.