Carrier multiplication in germanium nanocrystals

Carrier multiplication is demonstrated in a solid-state dispersion of germanium nanocrystals in a silicon-dioxide matrix. This is performed by comparing ultrafast photo-induced absorption transients at different pump photon energies below and above the threshold energy for this process. The average...

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Detalhes bibliográficos
Autor principal: Saeed, Saba (author)
Outros Autores: de Weerd, Chris (author), Stallinga, Peter (author), Spoor, Frank C. M. (author), Houtepen, Arjan J. (author), Siebbeles, Laurens D. A. (author), Gregorkiewicz, Tom (author)
Formato: article
Idioma:eng
Publicado em: 2018
Assuntos:
Multiple exciton generation
Silicon nanocrystals
Auger recombination
Solar-cells
Quantum confinement
Impact ionization
Pbse nanorods
Efficiency
Films
Photoluminescence
Texto completo:http://hdl.handle.net/10400.1/11277
País:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/11277

Texto Completo

http://hdl.handle.net/10400.1/11277

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