Phototransistor with nanocrystalline Si/amorphous Si bilayer channel

We report a field-effect phototransistor with a channel comprising a thin nanocrystalline silicon transport layer and a thicker hydrogenated amorphous silicon absorption layer. The semiconductor and dielectric layers were deposited by radio-frequency plasma enhanced chemical vapor deposition. The ph...

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Detalhes bibliográficos
Autor principal: Vygranenko, Yuri (author)
Outros Autores: Nathan, Arokia (author), Vieira, Manuela (author), Sazonov, Andrei (author)
Formato: article
Idioma:eng
Publicado em: 2011
Assuntos:
Amorphous semiconductors
Elemental semiconductors
Field effect transistors
Hydrogen
Multilayers
Nanostructured materials
Photoconductivity
Phototransistors
Plasma CVD
Silicon
Thin film transistors
Texto completo:http://hdl.handle.net/10400.21/700
País:Portugal
Oai:oai:repositorio.ipl.pt:10400.21/700

Texto Completo

http://hdl.handle.net/10400.21/700

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