Finite-element modeling and optimization-based parameter extraction algorithm for NPT-IGBTs
A finite-element, physics-based, non-punch-through (NPT) insulated gate bipolar transistor (IGBT) model is presented in this paper. The model's core is based on solving the ambipolar diffusion equation through a variational formulation, resulting in a system of ordinary differential equations (...
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| Outros Autores: | , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2009
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| Assuntos: | |
| Texto completo: | https://hdl.handle.net/10216/95924 |
| País: | Portugal |
| Oai: | oai:repositorio-aberto.up.pt:10216/95924 |