Optical and structural analysis of porous silicon coated with GZO films using rf magnetron sputtering

In the production of porous silicon (PS) to optoelectronic application one of the most significant constrains is the surface defects passivation. In the present work we investigate, gallium-doped zinc oxide (GZO) thin films deposited by rf magnetron sputtering at room temperature on PS obtained with...

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Bibliographic Details
Main Author: Prabakaran, R. (author)
Other Authors: Monteiro, T. (author), Peres, M. (author), Viana, A.S. (author), Cunha, A.F. (author), Águas, H. (author), Gonçalves, A. (author), Fortunato, E. (author), Martins, R. (author), Ferreira, I. (author)
Format: article
Language:eng
Published: 2007
Subjects:
Porous silicon
Gallium zinc oxide
Photoluminescence
IR
XRD
Online Access:http://hdl.handle.net/10773/6160
Country:Portugal
Oai:oai:ria.ua.pt:10773/6160

Internet

http://hdl.handle.net/10773/6160

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