Optical and structural analysis of porous silicon coated with GZO films using rf magnetron sputtering

In the production of porous silicon (PS) to optoelectronic application one of the most significant constrains is the surface defects passivation. In the present work we investigate, gallium-doped zinc oxide (GZO) thin films deposited by rf magnetron sputtering at room temperature on PS obtained with...

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Detalhes bibliográficos
Autor principal: Prabakaran, R. (author)
Outros Autores: Monteiro, T. (author), Peres, M. (author), Viana, A.S. (author), Cunha, A.F. (author), Águas, H. (author), Gonçalves, A. (author), Fortunato, E. (author), Martins, R. (author), Ferreira, I. (author)
Formato: article
Idioma:eng
Publicado em: 2007
Assuntos:
Porous silicon
Gallium zinc oxide
Photoluminescence
IR
XRD
Texto completo:http://hdl.handle.net/10773/6160
País:Portugal
Oai:oai:ria.ua.pt:10773/6160

Texto Completo

http://hdl.handle.net/10773/6160

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