Effect of the matrix on the 1.5 μm photoluminescence of Er-doped silicon quantum dots

Erbium doped nanocrystalline silicon thin films were produced by reactive magnetron r.f sputtering. Their structural and chemical properties were studied by micro-Raman, spectroscopic ellipsometry and Rutherford backscattering spectroscopy. Films with different crystalline fraction and crystallite s...

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Bibliographic Details
Main Author: Cerqueira, M.F. (author)
Other Authors: Stepikhova, M. (author), Losurdo, M. (author), Monteiro, T. (author), Soares, M.J. (author), Peres, M. (author), Neves, A. (author), Alves, E. (author)
Format: article
Language:eng
Published: 2012
Subjects:
Online Access:http://hdl.handle.net/10773/6636
Country:Portugal
Oai:oai:ria.ua.pt:10773/6636
Description
Summary:Erbium doped nanocrystalline silicon thin films were produced by reactive magnetron r.f sputtering. Their structural and chemical properties were studied by micro-Raman, spectroscopic ellipsometry and Rutherford backscattering spectroscopy. Films with different crystalline fraction and crystallite size were deposited by changing the deposition parameters. The impact of the composition and structure of Erbium ions environment on the 1.5 μm photoluminescence is discussed.