Switching in polymeric resistance random-access memories (RRAMS)

Resistive switching in aluminum-polymer-based diodes has been investigated using small signal impedance measurements. It is shown that switching is a two-step process. In the first step, the device remains highly resistive but the low frequency capacitance increases by orders of magnitude. In the se...

ver descrição completa

Detalhes bibliográficos
Autor principal: Gomes, Henrique L. (author)
Outros Autores: Benvenho, A. R. V. (author), De Leeuw, Dago M. (author), Cölle, M. (author), Stallinga, Peter (author), Verbakel, F. (author), Taylor, D. M. (author)
Formato: article
Idioma:eng
Publicado em: 2014
Assuntos:
Organic memory
Switching
Impedance spectroscopy
Oxide
Traps
Texto completo:http://hdl.handle.net/10400.1/3273
País:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/3273

Texto Completo

http://hdl.handle.net/10400.1/3273

Registos relacionados