Lattice site location and optical activity of Er implanted ZnO

ZnO (O face) single crystals were implanted with 150 keV Er+ ions to fluences of 5 × 1014 and 5 × 1015 Er+/cm2 at room temperature. For fluences of 5 × 1015 Er+/cm2 the implantation damage raises the minimum yield from 2% to 22%. Despite the large amount of damage a fraction of 90% of the implanted...

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Detalhes bibliográficos
Autor principal: Alves, E. (author)
Outros Autores: Rita, E. (author), Wahl, U. (author), Correia, J.G. (author), Monteiro, Teresa (author), Soares, Manuel (author), Boemare, Claude (author)
Formato: article
Idioma:eng
Publicado em: 1000
Assuntos:
Er doping
RBS/channeling
ZnO crystals
Texto completo:http://hdl.handle.net/10773/5550
País:Portugal
Oai:oai:ria.ua.pt:10773/5550
Descrição
Resumo:ZnO (O face) single crystals were implanted with 150 keV Er+ ions to fluences of 5 × 1014 and 5 × 1015 Er+/cm2 at room temperature. For fluences of 5 × 1015 Er+/cm2 the implantation damage raises the minimum yield from 2% to 22%. Despite the large amount of damage a fraction of 90% of the implanted Er ions are incorporated in substitutional sites along the [0 0 0 1] axis. Photoluminescence (PL) studies reveal the presence of a weak emission near 1.54 μm at 77 K due to the 4I13/2→4I15/2 transition of the Er3+ ions. Annealing in oxidizing atmosphere at 800 °C leads to a reduction of the implantation damage, which is fully recovered after annealing at 1050 °C for 30 min. The annealing at 1050 °C leads to the outdiffusion of Er, with a 50% loss from the implanted region after the annealing. Only a fraction of 25% of the remaining Er is still in regular sites after the annealing and the Er3+ PL vanishes

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