Lattice site location and optical activity of Er implanted ZnO

ZnO (O face) single crystals were implanted with 150 keV Er+ ions to fluences of 5 × 1014 and 5 × 1015 Er+/cm2 at room temperature. For fluences of 5 × 1015 Er+/cm2 the implantation damage raises the minimum yield from 2% to 22%. Despite the large amount of damage a fraction of 90% of the implanted...

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Detalhes bibliográficos
Autor principal: Alves, E. (author)
Outros Autores: Rita, E. (author), Wahl, U. (author), Correia, J.G. (author), Monteiro, Teresa (author), Soares, Manuel (author), Boemare, Claude (author)
Formato: article
Idioma:eng
Publicado em: 1000
Assuntos:
Er doping
RBS/channeling
ZnO crystals
Texto completo:http://hdl.handle.net/10773/5550
País:Portugal
Oai:oai:ria.ua.pt:10773/5550

Texto Completo

http://hdl.handle.net/10773/5550

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