Resistive switching in ferroelectric lead-free 0.5Ba (Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin films

In this work, resistive switching in pulsed laser deposited ferroelectric lead-free 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 (0.5BZT–0.5BCT) thin films was investigated. This study reveals that films grown at 5.5 J cm−2 have shown optimal ferroelectric and resistive switching response, which are attr...

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Detalhes bibliográficos
Autor principal: Silva, J. P. B. (author)
Outros Autores: Kamakshi, Koppole (author), Sekhar, K. C. (author), Queirós, E. C. (author), Moreira, J. Agostinho (author), Almeida, A. (author), Pereira, Mário (author), Tavares, P. B. (author), Gomes, M. J. M. (author)
Formato: article
Idioma:eng
Publicado em: 2016
Assuntos:
Resistive switching
Ferroelectricity
Pulsed laser deposition
(0.5BZT–0.5BCT) thin film
Science & Technology
Texto completo:http://hdl.handle.net/1822/43598
País:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/43598

Texto Completo

http://hdl.handle.net/1822/43598

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